LR1130 battery

Cambridge University develops printing process to protect perovskite LR1130 battery

Recent progress in the efficiency of perovskite LR1130 battery has been well documented, and the technology seems to be close to large-scale commercial production within a few years.

However, one of the important issues hindering the development of perovskites is the fragility of the perovskite layer itself. This often proves to be sensitive to moisture and other conditions that the cells may face in the field, and they may also suffer damage as other layers are deposited on top of it.

The sputtering process commonly used to deposit transparent electrode layers on perovskites is a particular problem here. There are already several methods to prevent damage to the perovskite during this process. However, scientists at the University of Cambridge have taken a different approach to the problem, which they say will open up new possibilities for efficient, semi-transparent perovskite devices.

The team has developed a method to "print" a layer of copper oxide on the perovskite. The layer can be deposited at low temperatures, using a technique that does not damage it. Even at just 3 nanometers thick, the copper oxide layer protects the perovskite from damage during the sputtering process of the transparent conductive oxide. In a paper published in ACS Energy Letters, the researchers describe the process of rapidly vapour-depositing a high-mobility p-type buffer layer on perovskite photovoltaics to achieve efficient semi-transparent devices.

"The key to their success was the ability of their oxide growth method to replicate the quality of precise, vacuum-based techniques, but in open air, and much faster," a statement from the university reads. "This minimises any damage to the perovskite, while ensuring the oxide is grown densely, rather than as a very thin layer."

Perovskite LR1130 battery made using the copper oxide layer achieved efficiencies of up to 16.7%. The semi-transparent cells were integrated into a range of silicon cell technologies, including p-type PERC and n-type 'monopoly' cells, developed by the Solar Energy Research Institute of Singapore (SERIS). The highest efficiency of 24.4% was achieved using a four-terminal tandem in a SERIS solar cell.

Cambridge's copper oxide deposition technique has the potential to be scaled up to commercial production, according to the team, and its research represents a new approach to silicon/perovskite tandem cell integration, which will also enable the development of other devices requiring high-quality protective layers.

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