NiMH battery packs

Research on single-chamber deposited amorphous silicon/amorphous silicon/microcrystalline silicon triple-stack NiMH battery packs

As an important component of renewable energy, photovoltaic power generation has attracted more and more people to invest in this research field, and almost every country is paying attention to research in this field. Low photovoltaic power generation cost and high-efficiency NiMH battery packs have always been the goal pursued by people. Single-chamber deposition technology, as a low-cost technology, has become one of the hot topics of people's attention. At present, most of the silicon-based thin-film NiMH battery packs with relatively mature industrialization are single-chamber deposited amorphous silicon thin-film NiMH battery packs or amorphous silicon/amorphous silicon stacked NiMH battery packs, and their photoelectric conversion efficiency is basically around 6.5%. How to use the existing low-cost technology and further improve its conversion efficiency is a direction worthy of attention. Based on the industrialized amorphous silicon/amorphous silicon stacked NiMH battery packs with relatively high photoelectric conversion efficiency and good stability, this paper first studied the single-chamber deposited single-junction microcrystalline silicon bottom cell, and then studied the high-efficiency and low-cost amorphous silicon/amorphous silicon/microcrystalline silicon triple-stack NiMH battery packs. At present, there are few reports on the research of single-chamber deposited amorphous silicon/amorphous silicon/microcrystalline silicon triple-stack NiMH battery packs. Through preliminary optimization

-V and EQE test of two microcrystalline silicon NiMH battery packs deposited continuously in a single chamber. The conversion efficiency of single-chamber deposition reaches 7.47%. -V curve of single-junction microcrystalline silicon solar cell. 3.2. Single-chamber deposition of amorphous silicon/amorphous silicon/microcrystalline silicon three-layer thin-film solar cell. After mastering the process technology of single-chamber deposition of single-junction microcrystalline silicon thin-film solar cell, the -V curve of amorphous silicon/amorphous silicon/microcrystalline silicon three-layer solar cell prepared with different silane concentrations for the intrinsic layer of amorphous silicon/amorphous silicon/microcrystalline silicon three-layer solar cell prepared with different treatment times for amorphous n layer. -V curve of amorphous silicon/amorphous silicon/microcrystalline silicon two-layer solar cell with a conversion efficiency of 9.52% -V curve of amorphous silicon/amorphous silicon/microcrystalline silicon three-layer solar cell prepared with different treatment times for amorphous n layer. Before preparing NiMH battery packs, we tested and analyzed the performance of small-area cells provided by the production line for amorphous silicon/amorphous silicon stacked NiMH battery packs. This is the -V test result of a cell with an area of 0.253cm2. It can be seen from the figure that although the amorphous silicon/amorphous silicon tandem solar cell is relatively small, the V and fill factor (FF) of the cell are relatively good, so the photoelectric conversion efficiency of the cell reaches 7.12%. -V curve of amorphous silicon/amorphous silicon tandem solar cell produced by Jinneng Battery Technology Co., Ltd. Based on the preparation of single-junction microcrystalline silicon thin-film NiMH battery packs in the previous article, this paper first studied the nip tunneling junction connecting amorphous silicon cells and microcrystalline silicon cells. Because the n-layer of the amorphous silicon/amorphous silicon tandem solar cell provided on the production line is amorphous, and the n-) tunneling junction in the amorphous silicon/amorphous silicon/microcrystalline silicon tandem solar cell needs to be microcrystalline to form good contact and tunneling characteristics. Therefore, it is necessary to process the amorphous silicon n-layer on the basis of this cell. This paper proposes a method of etching by hydrogen plasma and then depositing the microcrystalline silicon n-layer. The -V test results of the cells prepared by hydrogen plasma treatment time of 2s and 10s are given. It can be seen from the figure that hydrogen plasma treatment for a certain period of time has a good regulating effect on the battery characteristics, making the conversion efficiency increase from 8.12% to 8.69%. This is mainly because hydrogen plasma treatment will etch the amorphous silicon n layer, which on the one hand reduces the thickness of the amorphous silicon n layer, and on the other hand enables the subsequent growth of the microcrystalline n layer and p layer to be well crystallized, improving the characteristics of the microcrystalline silicon bottom battery, thereby improving the performance of the amorphous silicon/amorphous silicon/microcrystalline silicon triple stack solar cell.

In addition to focusing on the influence of the n-) tunneling junction, this paper also studies the changes in the deposition parameter i silane concentration (=/) that affects the performance of the microcrystalline silicon bottom battery. The Csc values of the deposited bottom battery intrinsic layer are 5.8% and 6% respectively. The -V test results of the prepared battery. We know that the increase of silane concentration in the reaction gas will increase the Vc of microcrystalline silicon cells. The test results of the curve show that the silane concentration has a certain regulating effect on the Vc of the microcrystalline silicon bottom cell. Under the condition that the Csc value of the bottom cell intrinsic layer is 6%, the Vc of the cell reaches 2.135V, and the photoelectric conversion efficiency also reaches . Through previous studies, it can be seen that the performance of amorphous silicon/amorphous silicon/microcrystalline silicon triple stack NiMH battery packs has a certain relationship with the deposition conditions of the bottom cell and the characteristics of the nip tunneling junction. This paper further optimizes the above parameters and obtains an amorphous silicon/amorphous silicon/microcrystalline silicon triple stack solar cell with a photoelectric conversion efficiency of 9.52%. The specific test results are shown as follows.

4 Conclusion Based on the amorphous silicon/amorphous silicon stack solar cell prepared on the production line, this paper optimizes the deposition conditions of the microcrystalline silicon bottom cell and the characteristics of the nip tunneling junction in the cell, and obtains an amorphous silicon/amorphous silicon/microcrystalline silicon triple stack solar cell with a photoelectric conversion efficiency of 9.52%. This cell is a complete single-chamber technology. Through research, it can be seen that the industrialized single-chamber amorphous silicon thin-film NiMH battery packs can undergo technological upgrades, that is, by utilizing the good stability and ability to expand the spectrum of microcrystalline silicon thin-film NiMH battery packs, research on high-efficiency amorphous silicon/microcrystalline silicon or amorphous silicon/amorphous silicon/microcrystalline silicon stacked NiMH battery packs can be conducted, contributing to the industrialization of silicon-based thin-film NiMH battery packs.

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