AG3 battery.Solar cell manufacturing process

　　1. Silicon wafer cutting and material preparation: The monocrystalline silicon material used in industrial production of silicon cells generally uses solar-grade monocrystalline silicon rods made by the crucible Czochralski method. The original shape is cylindrical, and then cut into square silicon wafers (or Polycrystalline square silicon wafer), the side length of the silicon wafer is generally 10~15cm, the thickness is about 200~350um, and the resistivity is about 1Ω.cm p-type (Global Energy Saving and Environmental Protection Network is boron-doped).

　　Low temperature lithium iron phosphate battery 3.2V 20A -20℃ charging, -40℃ 3C discharge capacity ≥70%

　　Charging temperature: -20~45℃ -Discharge temperature: -40~+55℃ -40℃ Support maximum discharge rate: 3C -40℃ 3C discharge capacity retention rate ≥70%

　　Click for details

　　2. Remove the damaged layer: Silicon wafers will produce a large number of surface defects during the cutting process, which will cause two problems. First, the surface quality is poor. In addition, these surface defects will lead to an increase in debris during the battery manufacturing process. Therefore, to remove the cutting damage layer, alkali or acid etching is generally used, and the thickness of the etching is about 10um.

　　3. Texturing: Texturing is to corrode the surface of the relatively smooth raw material silicon wafer through acid or alkali to make it uneven and rough, forming diffuse reflection and reducing the loss of solar energy directly hitting the surface of the silicon wafer. For single crystal silicon, the method of NaOH and alcohol is generally used to etch. The anisotropic corrosion of single crystal silicon is used to form numerous pyramid structures on the surface. The temperature of the alkali solution is about 80 degrees, the concentration is about 1~2%, and the etching time is About 15 minutes. For polycrystalline, acid etching is generally used.

　　4. Diffusion junction making: The purpose of diffusion is to form pN junction. Phosphorus is commonly used for n-type doping. Since solid-state diffusion requires high temperatures, it is very important to clean the surface of the silicon wafer before diffusion. The silicon wafer is required to be cleaned after texturing, that is, acid is used to neutralize alkali residues and metal impurities on the surface of the silicon wafer.

　　5. Edge etching and cleaning: During the diffusion process, a diffusion layer is also formed on the peripheral surface of the silicon wafer. The peripheral diffusion layer forms a short circuit ring between the upper and lower electrodes of the battery and must be removed. Any small local short circuit on the periphery will reduce the parallel resistance of the battery and even become a waste product. At present, industrial production uses plasma dry etching, which uses fluorine and oxygen to alternately act on silicon under glow discharge conditions to remove the periphery containing the diffusion layer. The purpose of post-diffusion cleaning is to remove the phosphosilicate glass formed during the diffusion process.

　　6. Deposit an anti-reflective layer: The purpose of depositing an anti-reflective layer is to reduce surface reflection and increase the refractive index. pECVD is widely used to deposit SiN. When pECVD deposits SiN, it not only grows SiN as an anti-reflective film, but also generates a large amount of atomic hydrogen. These hydrogen atoms can have dual effects of surface passivation and body passivation on polycrystalline silicon wafers. It can be used for mass production.

　　7. Screen printing upper and lower electrodes: The preparation of electrodes is a crucial step in the solar cell preparation process. It not only determines the structure of the emitting area, but also determines the series resistance of the battery and the area of the battery surface covered by metal. Vacuum evaporation or chemical plating technology was first used, but now the screen printing method is commonly used, that is, silver paste aluminum paste (silver aluminum paste) is printed on the front and back of the solar cell through a special printer and template to form the positive and negative electrodes lead.

　　8. Co-firing to form metal contact: Crystalline silicon solar cells need to print metal paste three times. The traditional process requires two sinterings to form a good ohmic contact with metal electrodes. The co-firing process only requires one sintering to form the upper and lower electrodes at the same time. of ohmic contact. In the production of screen-printed electrodes for solar cells, chain sintering furnaces are usually used for rapid sintering.

　　9. Battery chip testing: The completed battery cells are classified into different categories after testing.

Read recommendations:

Coin Battery CR 2354

Preparation method of nickel cobalt manganese lithium battery.18650 battery 3.7v 2200mah

CR2320 battery.This is the real reason why electric vehicle batteries are becoming increasingly less

solar energy storage lithium ion battery 15kwh 48v 100ah

li ion 18650 battery pack