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　　A hard-core player in silicon carbide technology, Infineon leads the new energy era with "cores"

　　A hard-core player in silicon carbide technology, Infineon uses "core" to lead the new energy era - the forum has the theme of "Cool Core Leads the Blooming of China", and Peter Friedrichs, senior director of Infineon Technologies, focused on "Infineon Silicon Carbide Technology" Layout" delivered a keynote speech, kicking off the entire conference. Many experts from Infineon, Delta Power, Institute of Electrical Engineering of the Chinese Academy of Sciences, Eaton Electric, TÜV Rheinland, and IHS Markit also attended the forum and gave wonderful reports.

　　Recently, the second Infineon Silicon Carbide Application Technology Development Forum and Photovoltaic and Energy Storage Sub-forum concluded successfully in spring-filled Shanghai. The event was packed with guests. The management team and technical experts of Infineon's Industrial Power Control Division, big names in silicon carbide industry, academia, and research, as well as partners in the co-creation ecosystem, gathered together to discuss the future of silicon carbide technology. Development prospects, application methods, and look forward to the future development trend of new energy.

　　The theme of the forum was "Cool Core Leads the Blooming of China". Peter Friedrichs, Senior Director of Infineon Technologies, delivered a keynote speech on "Infineon Silicon Carbide's Technical Layout", which kicked off the entire conference. Many experts from Infineon, Delta Electric Power, Institute of Electrical Engineering of the Chinese Academy of Sciences, Eaton Electric, TüV Rheinland Group, and IHS Markit also attended the forum and gave wonderful reports.

　　Peter Friedrichs, senior director of Infineon Technologies, delivered a speech at the forum

　　Under the wave of China's industrial innovation, emerging industries and energy industries are developing rapidly, and technology is constantly updated and iterated, which requires power devices to have better performance. With the advantages of high frequency, high efficiency, high power density and other advantages, silicon carbide power devices will usher in an explosive period and be widely used in various fields. In industries such as fast charging piles, solar inverters, medium and high-power UpS, new energy vehicles, rail transit and other industries, the market size of silicon carbide devices will expand rapidly and is expected to occupy the commanding heights of technology in the future.

　　As the world's leading semiconductor company, Infineon keeps pace with the times, pioneers and innovates, and launches advanced silicon carbide technology and complete solutions, which will help Chinese companies and partners in the following application fields:

　　Solar energy field: Silicon carbide technology can reduce the size and weight of the system while improving efficiency;

　　In the field of electric vehicle charging: high-speed charging can be achieved, circuits can be simplified, and losses can be reduced;

　　Motor field: SiCMOSFET can reduce loss and noise, and is expected to reduce the size and weight of the inverter by 55%;

　　New energy vehicle field: SiCMOSFET will become the main technology and will be applied in all parts of new energy vehicles.

　　At the forum, experts also discussed in detail the advantages of silicon carbide technology, deeply analyzed the opportunities and challenges that silicon carbide technology brings to the market, and shared their unique insights on the current situation and prospects of the silicon carbide market.

　　Highlight 1: When silicon carbide arrives, does it bring opportunities or challenges to the market?

　　The opportunities SiC brings to the market far outweigh the challenges. SiC devices have the advantages of high voltage, high frequency and high efficiency. However, professionals in the SiC field often have a "love-hate relationship" with SiC devices. On the one hand, SiC has reduced the size At the same time, the efficiency has been improved. On the one hand, SiC has very high requirements in terms of application technology. In order to achieve the ultimate in short-circuit protection and solve noise problems and heat dissipation problems, we have been continuously improving technology in recent years. Whether it is device research and development or system application, SiC still faces many technical barriers. We will work together with SiC component manufacturers to make progress in this regard.

　　——Ms. Pan Qi, Executive Director of Delta Power Electronics R&D Center

　　Highlight 2: Infineon’s market positioning in the SiC field and the importance of SiC to Infineon

　　SiC is Infineon's core product in the siliconization field. Infineon has made a lot of efforts in the R&D and production of SiC products. As far as production is concerned, although the production cycle and capacity of wafers are a challenge in the supply of SiC raw materials, Infineon's existing cold cutting technology has promoted the substantial increase in wafer production capacity and more efficient application. In terms of cultivating talents in the SiC technology field, Infineon continues to expand its top technical team, hoping to extend the production capacity and production scale of Si devices to SiC, produce high-quality, reliable SiC products, and further consolidate and enhance our market position. : Provide the most reliable SiC products and services to the industry!

　　Infineon has discussions about SiC with many domestic companies, and has mature and in-depth cooperation in the following industries: fast charging piles, solar inverters, medium and high-power UpS, vehicle power supplies, and rail transit. I think SiC can revolutionize the efficiency of a certain industry, such as improving energy efficiency and reducing weight and volume. It will definitely have a great impact on this field. However, SiC devices are not a panacea. For a long time to come, Si and SiC devices will coexist and develop together.

　　——Mr. Yu Daihui, Vice President of Infineon Technologies Greater China and Head of Industrial Power Control Division

　　Highlight 3: Are SiC and Si the same strain or are they thousands of miles apart?

　　It can be analyzed from the principle of SiC and Si devices. In terms of structure, the main difference between Si and SiC materials is their different electric field capabilities, which are 10 times different from each other. Therefore, there can be lessons learned between SiC’s 600V devices and Si’s 60V devices. What SiC devices are doing now is roughly the same as the technology Si was involved in before, so there are lessons to be learned in terms of principles.

　　——Professor Sheng Kuang, School of Electrical Engineering, Zhejiang University

　　Highlight 4: How to achieve reasonable SiC price positioning?

　　The price problem of SiC has always been serious, and customers always want the lower the price, the better. As an emerging technology, SiC also has the common problems of emerging technologies: small output, insufficient stability, and high price. Although everyone hopes that SiC technology can be popularized, the process of developing from emerging technology to general technology is often very long. IGBT has developed for a total of 30 years from 1990 to the present, and has gone through 7 generations of technology. In terms of wafers, it has gone through 4 inches, 6 inches, 8 inches, and 12 inches. The thickness of the chip has dropped from 300 to 60μm. , the final cost dropped to one-fifth of the original. Therefore, SIC technology also needs time to be technically polished to reduce costs.

　　——Dr. Ma Guowei, Director of Infineon’s Industrial Power Control Division

　　Highlight 5: Characteristics of modern power systems

　　Power electronics technology makes the generation, transmission, distribution, utilization and storage of electric energy in a precise and controllable state. It can significantly improve the flexibility and compatibility of electric energy conversion systems and has been widely used in modern power systems or power grids.

　　——Dr. Li Zixin, Institute of Electrical Engineering, Chinese Academy of Sciences

　　Highlight Six: Changes and Development Trends of Power Supply Networks

　　With the emergence of new semiconductor technologies, we have the opportunity to make major changes in the working mode of power electronics. Through this change, it is more conducive to proactively prevent various problems with the power grid and loads through uninterruptible power supplies.

　　——Mr. Zheng Dawei, Eaton Electric R&D Director

　　Over the years, wafers have gone through the development process of 4 inches, 6 inches, 8 inches, and 12 inches, and the thickness of chips has also been ultra-thin from 300 μm to 60 μm. The rapid changes in semiconductor technology have not only created advanced silicon carbide devices, but also There are chips, module topologies and packages that better meet specific industry needs.

　　In order to further build a new platform for industry exchanges, this silicon carbide application technology development forum also set up a photovoltaic and energy storage sub-forum for the first time. At the meeting, not only did the industry's most senior analysis and consulting firm interpret the future direction of the optical storage market, but the most authoritative certification agency explained in detail the design specifications and certification of optical storage products, and Infineon's technical experts introduced the event to the participants in a simple and in-depth manner. The most comprehensive photovoltaic product solutions, frequent on-site interactions and surprises, set off a boom in technology exchanges in the semiconductor industry.

　　Go further. After a year of great success, the Infineon Silicon Carbide Application Technology Development Forum has taken root in China and has borne fruitful results. In the future, Infineon will continue to strive to create "cores", lead the development of the silicon carbide industry, and work with partners to build a bright future in the new energy field.

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