Electronic enthusiasts provide you with technical analysis of copper indium
gallium selenide thin film solar cells. Copper indium gallium selenide thin film
solar cells have the characteristics of low production cost, low pollution,
non-fading, and good low light performance. The photoelectric conversion
efficiency ranks highest among all kinds of thin film solar cells. First, it is
close to crystalline silicon solar cells, and the cost is one-third of
crystalline silicon cells. It is internationally known as "a very promising new
thin-film solar cell in the next era."
Copper Indium Gallium Selenide Solar Panel
Academia and industry generally believe that the development of solar cells
has entered the third generation. The first generation is monocrystalline
silicon and polycrystalline silicon solar cells, the second generation is
silicon-based, amorphous silicon and other thin film solar cells, and the third
generation solar cells are multi-junction solar cells.
Applications of copper indium gallium selenide solar panels
Copper indium gallium selenide thin-film solar cells have the
characteristics of low production cost, low pollution, non-fading, and good
low-light performance. The photoelectric conversion efficiency ranks first among
various thin-film solar cells, close to crystalline silicon solar cells, while
the cost is that of crystalline silicon cells. One-third of the total, it is
internationally known as "a very promising new thin-film solar cell in the next
era." In addition, the battery has a soft and uniform black appearance, making
it an ideal choice for places with high requirements on appearance, such as
glass curtain walls of large buildings. It has a large market in modern
high-rise buildings and other fields.
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The construction of copper indium gallium selenide power stations has
reached the megawatt level. According to information provided by Switzerland's
SolarMax photovoltaic grid-connected inverter company, a 3.24 MW copper indium
gallium selenide power station was built in Spain in September 2008 and
successfully operated. . This will certainly accelerate the commercial
application of CIGS.
Photovoltaic modules using CIGS absorption layers can efficiently convert
light energy directly into electrical energy. It plays an important role in the
field of photovoltaic technology. The current world record R&D efficiency of
small-area cells has reached 21.7%, and the module efficiency has reached 16.5%.
Based on the current research progress of small batteries, the efficiency of
small components can reach 21% in the future, and the efficiency of full-area
components is expected to reach 18%. Low-cost CIGS photovoltaic modules can make
the cost of electricity less than euro;0.05/kWh and make an important
contribution to reducing CO2 emissions.
Product and Technology Outlook
The diversity of CIGS module products and designs provides a variety of
possibilities for the development of photovoltaic energy in the future. CIGS
glass-glass products can be used in photovoltaic power stations, roofs, and
building surfaces. At present, the average opening efficiency of flexible and
lightweight CIGS modules has exceeded 16%. As such products reach higher
efficiency, new large-scale applications and markets will be opened.
From a long-term development perspective, using CIGS as the bottom cell and
combining it with a suitable wide-gap absorber material to form a stacked cell
can make the solar cell efficiency exceed 30%. It can be seen that CIGS cells
are not only a highly competitive photovoltaic technology, but also have the
potential for further development and utilization.
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The main advantages of CIGS modules: high power generation and excellent
outdoor performance
Because the CIGS module has a lower temperature coefficient, good spectral
response and better low-light performance, it has higher power generation
capacity and therefore has a lower LCoE under most climate conditions. .
Additionally, the thin-film module design is based on integrated inline
technology that inherently reduces its sensitivity to shading. Low temperature
coefficient, high shadow occlusion tolerance, and good low-light performance are
also key requirements in BIpV applications.
Sustainable development: low energy consumption, short energy repayment
time, low material consumption
Based on the essential characteristics of thin-film solar cells - short
energy payback time and minimal application of high-purity materials - the cost
of generating electricity from thin-film solar cells can be lower than that of
traditional energy sources. When calculating the carbon footprint, thin film
solar cells have significant advantages and are a truly sustainable energy
source. In addition, after the photovoltaic modules reach their life span, their
complete recycling is technically feasible, and they can be developed and
utilized based on demand in the future. For the above reasons, CIGS technology
is the most sustainable solution for large-scale photovoltaic applications.
Trusted product reliability
Based on a double-glass copper indium gallium selenide module based on a
rigid glass substrate, the electrical interconnection of the battery cells is
formed by laser scribing to form an integrated series structure. Compared with
the traditional series welding interconnection
method has greater reliability. Nowadays, the reliability of mass-produced
copper indium gallium selenide components has been confirmed by a large number
of accelerated aging experiments and long-term field test data, and has been
certified by independent testing institutions.
Gigawatt-level large-scale production capacity
The current largest copper indium gallium selenide production capacity,
ranging from 100 megawatts to 1 gigawatt per year, exists in Germany and Japan.
These production bases operate with an industry value chain yield rate of more
than 90%. At present, the total production capacity of copper indium gallium
selenide in the world reaches 2GW/year. Although the preparation process of the
copper indium gallium selenide film layer differs between different companies,
they all show good product performance. This shows that the copper indium
gallium selenide photovoltaic module manufacturing industry has reached the
first stage of industrial maturity. Even if indium, a scarce element in the
earth's crust, is used, a production capacity of 100GW per year will not pose a
challenge to the supply chain. This is due to technological advancements that
reduce the amount of indium used and the recycling of indium elements. Continued
progress in technology research and development will unlock greater potential
for cost reductions in copper indium gallium selenide in the next decade.
Cost of production
Today, the production cost of copper indium gallium selenide photovoltaic
modules is almost the same as that of crystalline silicon solar modules. This is
despite the fact that the production scale and cumulative output of copper
indium gallium selenide are several times smaller than that of the crystalline
silicon solar energy industry. From 2008 to 2014, global shipments of copper
indium gallium selenide modules were 3GW. This shows that the copper indium
gallium selenide photovoltaic industry is at the beginning of the industry
recognition curve, just like the process experienced by similar thin film
industries such as flat panel display and glass coating. The combination of
large area uniform coating, accelerated process flow and more powerful copper
indium gallium selenide coating equipment has the potential to achieve
manufacturing costs of US$0.4 per peak watt for 150MW capacity. It is worth
pointing out that the equipment investment for copper indium gallium selenide
component production includes a complete industrial chain from glass substrate
input to finished component output.
Based on the achievements achieved today by copper indium gallium selenide
modules, we can see huge potential for cost reduction in the future. The key is
to transfer the high photoelectric conversion efficiency from a small area in
the laboratory to large-scale production. Factors influencing the continued cost
reduction in the next stage include: improvement in module efficiency from 14%
to 18%, reduction in material costs (BOM) driven by scale effects, and cost
reduction driven by R&D (ultra-thin absorption layer, use of lower purity
raw materials ), decline in equipment investment, improvement in production
capacity (capacity, yield rate and equipment utilization rate) driven by
next-generation equipment, reduction in production energy consumption and
optimized infrastructure. Taking into account all cost reduction factors, at the
gigawatt (GW) scale, the production cost of copper indium gallium selenide will
achieve a further reduction of 25% to 40%.
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